tsm3401 taiwan semiconductor document number: ds_p0000072 1 version: c15 p-channel power mosfet -30v, -3a, 60m ? features advance trench process technology high density cell design for ultra low on- resistance pb-free plating rohs compliant halogen-free package key performance parameters parameter value unit v ds -30 v r ds(on) (max) v gs = -10v 60 m ? v gs = -4.5v 90 q g 9.52 nc application load switch pa switch sot23 notes: moisture sensitivity level: level 3. per j-std-020 absolute maximum ratings (t a = 25c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current (note 1) t a = 25c i d -3 a pulsed drain current (note 2) i dm -10 a continuous source current (diode conduction) i s -1.9 a total power dissipation t a = 25c p dtot 1.6 w operating junction and storage temperature range t j , t stg - 55 to +150 c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 75 c/w junction to ambient thermal resistance r ? ja 250 c/w notes: r ? ja is the sum of the junction-to-case and case-to-amb ient thermal resistances. the case thermal referenc e is defined at the solder mounting surface of the drain pins. r ? ja is guaranteed by design while r ? ca is determined by the users board design. r ? ja shown below for single device operation on fr-4 pcb in still air.
tsm3401 taiwan semiconductor document number: ds_p0000072 2 version: c15 electrical specifications (t a = 25c unless otherwise noted) parameter conditions symbol min typ max unit static (note 3) drain-source breakdown voltage v gs = 0v, i d = -250a bv dss -30 -- -- v gate threshold voltage v ds = v gs , i d = -250a v gs(th) -1.0 -1.5 -3.0 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = -24v, v gs = 0v i dss -- -- -1 a on-state drain current v ds = -5v, v gs = -10v i d(on) -6 -- -- a drain-source on-state resistance v gs = -10v, i d = -3a r ds(on) -- 50 60 m ? v gs = -4.5v, i d = -2a -- 75 90 forward transconductance v ds = -15v, i d = -5a g fs 4 7 -- s dynamic (note 4) total gate charge v ds = -15v, i d = -3a, v gs = -10v q g -- 9.52 -- nc gate-source charge q gs -- 3.43 -- gate-drain charge q gd -- 1.71 -- input capacitance v ds = -15v, v gs = 0v, f = 1.0mhz c iss -- 551.57 -- pf output capacitance c oss -- 90.96 -- reverse transfer capacitance c rss 60.79 switching (note 5) turn-on delay time v dd = -15v, r gen = 6 ? , i d = -1a, v gs = -10v, t d(on) -- 10.8 -- ns turn-on rise time t r -- 2.33 -- turn-off delay time t d(off) -- 22.53 -- turn-off fall time t f -- 3.87 -- source-drain diode (note 3) forward on voltage i s = -1.9 a, v gs = 0v v sd -- -0.8 -1.3 v notes: 1. pulse width limited by the maximum junction tempe rature. 2. surface mounted on fr4 board, t 5 sec. 3. pulse test: pw 300s, duty cycle 2%. 4. for design aid only, not subject to production test ing. 5. switching time is essentially independent of oper ating temperature.
tsm3401 taiwan semiconductor document number: ds_p0000072 3 version: c15 ordering information part no. package packing tsm3401cx rfg sot-23 3,000pcs / 7reel note: 1. compliant to rohs directive 2011/65/eu and in acco rdance to weee 2002/96/ec 2. halogen-free according to iec 61249-2-21 definiti on
tsm3401 taiwan semiconductor document number: ds_p0000072 4 version: c15 characteristics curves (t a = 25c unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage i d , drain current(a) -v gs , gate to source voltage (v) i s , source current (a) i d , continuous drain current (a) v ds , drain to source voltge(v) q g , total gate charge (nc) t j , junction temperature (c) v sd , source to drain voltge(v) normalized on resistance (m w ) i d , drain current (a) v gs , gate to source voltge(v) r ds(on) , on resistance (m w )
tsm3401 taiwan semiconductor document number: ds_p0000072 5 version: c15 characteristics curves (t a = 25c unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage single pulse power normalized thermal transient impedance curve time (sec) r ds(on) , on resistance (m w ) v gs , gate to source voltge(v) power (w) v gs(th) , variance (v) t j , junction temperature (c) i d , drain current (a) square wave pulse duration (s)
tsm3401 taiwan semiconductor document number: ds_p0000072 6 version: c15 package outline dimensions (unit: millimeters) sot-23 suggested pad layout (unit: millimeters) marking diagram y = year code m = month code for halogen free product o =jan p =feb q =mar r =apr s =may t =jun u =jul v =aug w =sep x =oct y =nov z =dec l = lot code (1~9, a~z)
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